Abstract This article reports the formation of polycrystalline In1-xGaxSb films (x = 0, 0.2, 0.4, 0.5, and 1) deposited by magnetron sputtering on SiO2/Si substrates and a comprehensive characterization of their atomic composition, structure, and electrical properties. The structural and electrical characteristics of the films can be easily tuned by varying the stoichiometry of the compounds. The atomic composition of the films was investigated with particle induced x-ray emission and Rutherford backscattering spectrometry (RBS) techniques (the latter as a function of depth), while grazing incidence x-ray diffraction analysis yielded valuable information about the structure of the films. In1-xGaxSb films were polycrystalline, with crystallite sizes in the range 18–42 nm. Combining RBS and scanning electron microscopy results, it was possible to infer the overall density and also the density of the crystalline portion of the films, which turned out to be significantly distinct. A non-negligible fraction of oxygen atoms has been detected in all films, most prominently in the ternary ones, contributing to the formation of high density amorphous In2O3 and Ga2O3 in films with 40% and 50% Ga, while amorphous antimony oxide phases are predominant in the binaries as well as the ternary compound with 20% Ga. The electrical characterization of the films was performed using four point and Hall effect methods and the results show a consistent increase in resistivity with Ga concentration.

中文翻译：

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磁控溅射沉积 In1-xGaxSb 薄膜的原子组成、结构和电学性质

摘要 本文报道了通过磁控溅射在 SiO2/Si 衬底上沉积的多晶 In1-xGaxSb 薄膜（x = 0、0.2、0.4、0.5 和 1）的形成及其原子组成、结构和电学性质的综合表征。通过改变化合物的化学计量，可以很容易地调整薄膜的结构和电学特性。使用粒子诱导 X 射线发射和卢瑟福背散射光谱 (RBS) 技术（后者作为深度的函数）研究了薄膜的原子组成，而掠入射 X 射线衍射分析产生了关于薄膜结构的有价值的信息. In1-xGaxSb 薄膜是多晶的，微晶尺寸在 18-42 nm 范围内。结合 RBS 和扫描电镜结果，可以推断出薄膜的整体密度和结晶部分的密度，结果证明它们是明显不同的。在所有薄膜中都检测到不可忽略的氧原子分数，最突出的是在三元薄膜中，有助于在具有 40% 和 50% Ga 的薄膜中形成高密度非晶 In2O3 和 Ga2O3，而非晶氧化锑相占主导地位在二元以及具有 20% Ga 的三元化合物中。使用四点和霍尔效应方法对薄膜进行电学表征，结果显示电阻率随 Ga 浓度一致增加。