This work studies the effect of temperature on ytterbium-doped zirconium diselenide (Yb-ZrSe₂) thin films synthesized via the electrochemical deposition method. The films were characterized using a scanning electron microscope (SEM), x-ray diffractometer (XRD), energy dispersive x-ray spectrophotometer (EDX), UV-1800 visible spectrophotometer, and a four-point probe system for their morphological, structural, elemental, optical, and electrical properties respectively. SEM images revealed ball-like clusters which transformed to nest-like clumps upon doping while XRD plots reveal polycrystalline films with diffraction peaks at (100), (211), (200), (201), (210), and (211) planes. EDX plots confirmed the deposition of basic elements while the optical results recorded good optical properties and band gap energy between 1.75–1.79 eV. The electrical result revealed improved electrical conductivity of the deposited samples at increasing temperatures. The films deposited find application in solar cell and optical devices.

这项工作研究温度对掺ped二硒化锆（Yb-ZrSe ₂）通过电化学沉积方法合成的薄膜。使用扫描电子显微镜（SEM），X射线衍射仪（XRD），能量色散X射线分光光度计（EDX），UV-1800可见分光光度计和四点探针系统对薄膜进行表征，以了解其形态，结构，分别具有元素，光学和电学性质。扫描电镜（SEM）图像显示球形团簇在掺杂后转变为巢状团块，而X射线衍射图显示多晶膜在（100），（211），（200），（201），（210）和（211）处具有衍射峰飞机。EDX图证实了基本元素的沉积，而光学结果记录了良好的光学性质和介于1.75–1.79 eV之间的带隙能量。电学结果表明，在升高的温度下，沉积样品的电导率有所提高。沉积的薄膜可用于太阳能电池和光学设备。