Abstract Fe-doped NiO nanocrystals (NCs) were prepared by a simple solvothermal route and applied as a hole injection layer (HIL) in quantum dots light-emitting diodes QLEDs. The transmittance of the film is more than 82%. The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 27624 cd m−2 after doping 5% mol Fe in NiO, due to the enhanced carrier concentration and conductivity. The external quantum efficiency (EQE), current efficiency (CA) and lifetime of the QLED device showed the maximum values of 3.84%, 5.93 cd A−1 and 11490 h, respectively.

中文翻译：

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提高量子点发光二极管的电致发光性能：一种很有前途的 Fe 掺杂 NiO 纳米晶体的空穴注入层

摘要 通过简单的溶剂热途径制备了掺杂 Fe 的 NiO 纳米晶体 (NCs)，并将其用作量子点发光二极管 QLED 中的空穴注入层 (HIL)。薄膜的透光率在82%以上。由于载流子浓度和电导率提高，在 NiO 中掺杂 5% mol Fe 后，所得器件显示出纯 QD 电致发光发射，最大 EL 亮度为 27624 cd m-2。QLED 器件的外量子效率 (EQE)、电流效率 (CA) 和寿命分别显示最大值 3.84%、5.93 cd A-1 和 11490 h。