Abstract Nanocrystalline powders of BiFe1-xMgxO3 (x = 0, 0.05, and 0.10) were prepared via a co−precipitation method. This produced a dense ceramic microstructure when sintering the compacted nanocrystalline powders at 800 °C for 3 h. A main phase of BiFeO3 with a small number of impurity phases was confirmed to exist in the sintered ceramics. High e′ values of 103-105 in the temperature range of 200–473 K were obtained. Dielectric relaxation behavior was studied over a wide temperature range. The low− and high−temperature dielectric relaxations originated from electron hopping between Fe2+↔Fe3+ and the interfacial polarization associated with the long−range motion of free charge carriers, respectively. To describe the dielectric properties of the Mg2+−doped BiFeO3 ceramics, theoretical calculations were performed to investigate the most preferable formation of complex defects. It was found that the dopant concentration had an effect on the defect shapes and dielectric properties.

中文翻译：

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复合缺陷对沉淀法制备的Mg2+掺杂BiFeO3陶瓷巨介电性能起源的影响

摘要 通过共沉淀法制备了 BiFe1-xMgxO3 (x = 0、0.05 和 0.10) 纳米晶粉末。当在 800 °C 下烧结压实的纳米晶粉末 3 小时时，这会产生致密的陶瓷微观结构。已确认烧结陶瓷中存在主相 BiFeO3 和少量杂质相。在 200-473 K 的温度范围内获得了 103-105 的高 e' 值。在很宽的温度范围内研究了介电弛豫行为。低温和高温介电弛豫分别源于 Fe2+↔Fe3+ 之间的电子跳跃和与自由载流子长程运动相关的界面极化。为了描述 Mg2+−掺杂的 BiFeO3 陶瓷的介电性能，进行了理论计算以研究复杂缺陷的最优选形成。发现掺杂剂浓度对缺陷形状和介电特性有影响。