Abstract PbMnTe film attracted intense scientific attention because of its promising properties such as enhanced magneto-optical effects, huge negative magneto-resistance effect, and Curie-Weiss paramagnetism. The electro-magnetic properties of PbMnTe film were intensively studied in the past decades. In contrast, the fabrication of PbMnTe film was still less investigated and its growth behavior was needed to be better understood. In this work, we study the growth behaviors of Pb1−xMnxTe as a function of Mn content (x) and temperatures of BaF2(1 1 1) substrate. The structure and growth behavior of Pb1−xMnxTe film changed substantially when the Mn content is larger than the criteria of x = 0.026. Mn will replace the position of Pb2+ for cases of x 0.026, resulting in the formation of pit-like domains on the spiral islands of PbMnTe alloy film. The pit-like MnTe grains aggregated nearby the threading dislocations due to the existence of the stress field at these defect regions. The criteria of Mn to replace Pb increases when deposited PbMnTe at higher substrate temperature. This indicates that the quality of Pb1−xMnxTe film would be improved if the substrate was kept at high temperature while in deposition.

中文翻译：

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BaF2(1 1 1) 上 PbMnTe 薄膜的外延生长行为：Mn 掺杂密度和衬底温度的影响

摘要 PbMnTe 薄膜因其增强的磁光效应、巨大的负磁阻效应和居里-魏斯顺磁性等有前途的特性而引起了科学界的广泛关注。在过去的几十年中，PbMnTe 薄膜的电磁特性得到了深入研究。相比之下，PbMnTe 薄膜的制造研究仍然较少，需要更好地了解其生长行为。在这项工作中，我们研究了 Pb1−xMnxTe 作为 Mn 含量 (x) 和 BaF2(1 1 1) 衬底温度的函数的生长行为。当Mn含量大于x = 0.026的标准时，Pb1-xMnxTe薄膜的结构和生长行为发生了显着变化。对于 x 0.026 的情况，Mn 将取代 Pb2+ 的位置，导致在 PbMnTe 合金膜的螺旋岛上形成坑状域。由于这些缺陷区域存在应力场，坑状 MnTe 晶粒聚集在螺纹位错附近。当在更高的衬底温度下沉积 PbMnTe 时，Mn 替代 Pb 的标准会增加。这表明如果在沉积过程中将衬底保持在高温下，Pb1-xMnxTe 薄膜的质量将得到改善。