We studied the properties of electron transport in mesoscopic GaAs/AlGaAs heterostructure without any intentional dopants in which an external electric field defined the two-dimensional electron gas (2DEG). An electrically formed 2DEG without intentional doping offers many advantages because of the absence of high concentrations of charged scattering centers. We demonstrate that the electron concentration can be easily tuned by varying the gate voltage. This tunability was observed for a high-quality 2DEG with a carrier density ranging from 0.75 to 3.34 × 10 11 cm −2 , for which the corresponding mobility ranged from 0.26 to 2.93 × 10 6 cm 2 V −1 s −1 . The mobility of the 2DEG is closely followed the experimental power law for high-mobility wafers, μ ∞ n 2D 0.7 .

中文翻译：

---

未掺杂 GaAs/AlGaAs 异质结构中表面栅极控制的二维电子气的特性

我们研究了没有任何有意掺杂的介观 GaAs/AlGaAs 异质结构中的电子传输特性，其中外部电场定义了二维电子气 (2DEG)。由于没有高浓度的带电散射中心，没有有意掺杂的电形成的 2DEG 具有许多优点。我们证明可以通过改变栅极电压轻松调整电子浓度。对于载流子密度范围为 0.75 至 3.34 × 10 11 cm -2 的高质量 2DEG 观察到这种可调性，其相应的迁移率范围为 0.26 至 2.93 × 10 6 cm 2 V -1 s -1 。2DEG 的迁移率严格遵循高迁移率晶片的实验幂律，μ ∞ n 2D 0.7 。