The pinning properties of GdBa 2 Cu 3 O 7-δ (GdBCO) films fabricated by the reactive co-evaporation deposition and reaction (RCE-DR) process were very sensitive to the post-annealing temperature in a reduced oxygen atmosphere. For this study, as-grown GdBCO coated conductors (CCs) were post-annealed at the temperatures ranging from 450 to 750 °C in the oxygen pressure ( P O 2 ) of 300 mTorr, and subsequently oxygenated at 500 °C for 1 h in pure oxygen gas atmosphere. Compared with the pristine sample, samples post-annealed at the temperature region of 450 °C–600 °C for 1 h possessed higher stacking fault (SF) density and also included the GdBa 2 Cu 4 O 8 (Gd124) phase while samples post-annealed at 650 °C for 1 h and 750 °C for 5 min showed lower SF density. The HAADF-STEM analyses on the sample post-annealed at 500 °C revealed that the Gd124 phase mainly existed near the CuO phase. At the temperature region o...

中文翻译：

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后退火对RCE-DR制备的GdBa 2 Cu 3 O7-δ涂层导体钉扎性能的影响

通过反应性共蒸发沉积和反应（RCE-DR）工艺制备的GdBa 2 Cu 3 O7-δ（GdBCO）薄膜的钉扎特性对氧气还原气氛中的退火后温度非常敏感。在本研究中，将生长的GdBCO涂层导体（CC）在450至750°C的温度和300 mTorr的氧气压力（PO 2）中进行后退火，然后在500°C的温度下进行1 h的氧化。纯氧气气氛。与原始样品相比，在450°C–600°C的温度区域后退火1 h的样品具有更高的堆垛层错（SF）密度，并且还包含GdBa 2 Cu 4 O 8（Gd124）相，而后样品650°C退火1 h和750°C退火5 min表现出较低的SF密度。HAADF-STEM分析样品在500°C后退火后发现，Gd124相主要存在于CuO相附近。在温度范围内...