Considering the ongoing miniaturization of electronic devices using new categories of nanomaterials, particular importance should be given to the quantum confinement effects in advanced fabrication processes. This paper presents a new analytical model of the quantum capacitance for zigzag silicon doped graphene nanscrolls,SiCNSs. Although, studying the electronic properties and synthesis methods of SiC-based nanostructures has drawn great research attention in recent years, no analytical model or numerical simulation for quantum capacitance and carrier concentration has been conducted concerning the SiC nanoscrolls so far. In this study, the quantum capacitance model of zigzag SiCNSs is presented for both degenerate and non-degenerate regimes considering the effects of different structural parameters. In the degenerate regime, the zigzag SiCNS shows a constant quantum capacitance value of 4.75 × 10 –11 F m −1 (47.5 pF m −1 ) while for non-degenerate ...

中文翻译：

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阿基米德曲折SiC纳米卷中量子电容和载流子浓度的分析模型

考虑到使用新型纳米材料的电子设备的持续小型化，应该特别重视先进制造工艺中的量子限制效应。本文提出了一种新的Z形硅掺杂石墨烯纳米卷SiCNSs量子电容的解析模型。尽管近年来对基于SiC的纳米结构的电子性质和合成方法的研究引起了极大的研究关注，但迄今为止，尚未对SiC纳米卷进行量子电容和载流子浓度的分析模型或数值模拟。在这项研究中，考虑了不同结构参数的影响，提出了锯齿形SiCNSs的简并和非简并形式的量子电容模型。在堕落的政权中