To obtain high device fabrication uniformity and reproducibility for vertically curved silicon waveguide optical coupler, we developed the high accuracy ion implantation bending (IIB) method by incorporating a tungsten mask that can partially shield the ion implantation. The developed IIB method improved the positional accuracy of the origin of vertically curved Si wire bending from a wet etching-level of 1 μ m order to a dry etching-level of several 100 nm order, and we obtained a fabrication accuracy of about less than ±0.4 μ m of the tip position of the Si-wire vertically curved structures.

中文翻译：

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硬掩模屏蔽离子注入弯曲提高垂直弯曲硅波导光耦合器的制造精度

为了获得垂直弯曲的硅波导光耦合器的高器件制造均匀性和可重复性，我们通过结合可以部分屏蔽离子注入的钨掩膜开发了高精度离子注入弯曲（IIB）方法。改进的IIB方法将垂直弯曲的Si线弯曲的起点的位置精度从1μm的湿蚀刻水平提高到了100 nm量的干蚀刻水平，并且获得的制造精度大约小于Si线垂直弯曲结构的尖端位置的±0.4μm。