CuIn_1−xGa_xSe₂ (CIGS) thin-film has examined as an absorber layer for the solar cells because of the suitable absorption value, stability and economic in manufacture. CIGS thin films belong to the I-III-VI2 group of the periodic table with the appropriate direct bandgap (1.5 eV). In this study, the CIGS thin films were annealed at ∼200°C for four different annealing times durations (15, 30, 45 and 60 min) to investigate the effect of annealing time on the crystalline structure and optical properties in CIGS thin films prepared by using the sol-gel dip coating technique. CIGS thin films annealed at ∼200°C for 60 min have been found to have the best structural and optical properties for this study. As the crystallite size increased with the rise of the annealing time the lattice strain decreased indicating the elimination of the crystallite defects in the CIGS thin-film structure. Hence, the structural changes affected the optical properties slightly and the rise of the optical absorbance (A%) resulted in a decrease of the optical transmittance (T %).

中文翻译：

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退火时间对CIGS薄膜的影响

CuIn _1-x Ga _x Se ₂（CIGS）薄膜由于具有合适的吸收值，稳定性和制造经济性而被研究用作太阳能电池的吸收层。CIGS薄膜属于周期表的I-III-VI2组，具有适当的直接带隙（1.5 eV）。在这项研究中，CIGS薄膜在约200°C退火四个不同的退火时间（15、30、45和60分钟），以研究退火时间对制备的CIGS薄膜的晶体结构和光学性能的影响。通过使用溶胶-凝胶浸涂技术。已发现在约200°C的温度下退火60分钟的CIGS薄膜具有最佳的结构和光学性能。随着微晶尺寸随着退火时间的增加而增加，晶格应变降低，表明CIGS薄膜结构中微晶缺陷的消除。因此，结构变化对光学性能的影响很小，并且光吸收率（A％）的增加导致光透射率（T％）的降低。