This article presents optical receivers in bulk CMOS technology with integrated Schottky photodiodes (PDs). These PDs can detect photons with an energy below the silicon bandgap, such as the 1310/1550 nm wavelengths typically used in single-mode fiber applications. In particular, a comparison of Schottky PDs in 28 and 40 nm bulk CMOS and its circuit design implications are given. As these PDs have a relatively low responsivity, however, a low-noise electronic front end is required to convert the low photocurrents into voltages suitable for signal processing. Positive capacitive feedback and designing near critical damping are two techniques that can improve the noise performance of transimpedance amplifiers. These techniques are thoroughly analyzed and demonstrated. Finally, measurement results of silicon implementations with integrated Schottky PD using these techniques are presented.

中文翻译：

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1310/1550 nm 光接收器，采用体 CMOS 中的肖特基光电二极管

本文介绍了具有集成肖特基光电二极管 (PD) 的体 CMOS 技术光接收器。这些 PD 可以检测能量低于硅带隙的光子，例如单模光纤应用中通常使用的 1310/1550 nm 波长。特别是，给出了 28 和 40 nm 体 CMOS 中肖特基 PD 的比较及其电路设计含义。然而，由于这些 PD 的响应率相对较低，因此需要低噪声电子前端将低光电流转换为适合信号处理的电压。正电容反馈和设计接近临界阻尼是两种可以改善跨阻放大器噪声性能的技术。这些技术被彻底分析和证明。最后，