Class-C operation is leveraged to implement a $K$ -band CMOS voltage-controlled oscillator (VCO) where the upconversion of $1/f$ current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as −112 dBc/Hz at 1-MHz offset (−86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of −185 dBc/Hz. The design is complemented by a theoretical investigation of $1/f$ noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the $1/f^{3}$ region.

中文翻译：

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19.5-GHz 28-nm C 类 CMOS VCO，对由短通道效应引起的 1/f 噪声上变频具有相当严格的结果

利用 C 类操作来实现 $K$ -band CMOS 压控振荡器 (VCO) 其中上变频 $1/f$ 来自振荡器核心中交叉耦合晶体管的电流噪声被稳健地控制在非常低的水平。采用块体 28-nm CMOS 技术实现的 12% 调谐范围 VCO 在 1-MHz 偏移（-86 dBc/Hz 在 100 kHz 偏移）与 19.5 GHz载波，同时消耗 20.7 mW，实现了 −185 dBc/Hz 的品质因数 (FoM)。该设计补充了理论研究 $1/f$ 由交叉耦合晶体管中的短沟道效应引起的噪声上变频，获得闭式相位噪声表达式的第一个实例 $1/f^{3}$ 地区。