Distributed charge injection (CI) scheme featuring distributed VMAX-complaint CI clamps, distributed digital droop detectors (DDDs), and distributed droop controllers for fast mitigation of voltage droop is fabricated in a 10-nm CMOS test chip. A local DDD detects nearby voltage droop and quickly triggers associated CI clamps to inject charge from an additional high-voltage rail (e.g., 1.8 V) to VCC for immediate voltage droop mitigation. Distributed droop controllers collectively guarantee stable operation after CI is triggered by gradually allowing the voltage regulator to take over after the droop subsides. Detailed simulations supported by a theoretical analysis give the necessary conditions for stable distributed CI operation. At 0.8 V/1.4 GHz (1.0 V/2.0 GHz), the measured data from a 10-nm test chip show droop reduction by up to 74% (45%) for a uniform transition and by 56% (38%) for a hot-spot transition. The droop reduction is translated to power savings of ~11% over a guard-banded baseline.

中文翻译：

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10 nm CMOS 中的全数字、$V_{\mathrm{MAX}}$ 兼容、稳定且可扩展的分布式电荷注入方案，可快速局部缓解电压下降


分布式电荷注入 (CI) 方案采用分布式 VMAX 兼容 CI 钳位、分布式数字跌落检测器 (DDD) 和分布式跌落控制器，可快速缓解电压跌落，并在 10 nm CMOS 测试芯片中制造。本地DDD检测附近的电压跌落并快速触发相关的CI钳位以将电荷从附加的高压轨（例如1.8V）注入到VCC以立即缓解电压跌落。分布式下垂控制器通过在下垂消退后逐渐让电压调节器接管来共同保证 CI 触发后的稳定运行。理论分析支持的详细模拟为分布式 CI 稳定运行提供了必要条件。在 0.8 V/1.4 GHz (1.0 V/2.0 GHz) 下，10 nm 测试芯片的测量数据显示，对于均匀过渡，压降降低高达 74% (45%)，对于均匀过渡，压降降低 56% (38%)。热点转变。与保护带基线相比，下降减少意味着节能约 11%。