In this letter, we present an experimental study on the frequency (f) dependence of trap generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin field-effect transistors (p-FinFETs), by adopting the direct-current current voltage (DCIV) method and an energy profiling technique. The interface trap generation ( $\Delta ~\text{N}_{IT}$ ) and bulk trap generation ( $\Delta ~\text{N}_{OT}$ ) are separated from the measured DCIV data and their ${f}$ dependences are independently investigated. The DCIV results indicate that the observed strong ${f}$ dependence of trap generation is primarily attributed to the ${f}$ -dependent $\Delta ~\text{N}_{OT}$ that exhibits a 36% reduction when ${f}$ increases from 10 Hz to 1 MHz. Furthermore, this ${f}$ -dependent $\Delta ~\text{N}_{OT}$ is mainly distributed between ${\text{E}_{v}}$ and ${\text{E}_{i}}$ , and exhibits a visible ${f}$ -dependent peak of energy density around ${\text{E}_{c}}$ .

中文翻译：

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了解 Si p-FinFET 中交流负偏置温度不稳定性应力下陷阱生成的频率依赖性

在这封信中，我们提出了一个关于频率的实验研究（F) 通过采用直流电压 (DCIV) 方法和能量分析技术，Si p 沟道鳍式场效应晶体管 (p-FinFET) 中交流负偏压温度不稳定性 (NBTI) 应力下陷阱生成的依赖性。界面陷阱生成（ $\Delta ~\text{N}_{IT}$ ) 和批量陷阱生成 ( $\Delta ~\text{N}_{OT}$ ) 与测得的 DCIV 数据和它们的 ${f}$ 依赖性进行独立调查。DCIV 结果表明观察到的强 ${f}$ 陷阱生成的依赖性主要归因于 ${f}$ -依赖 $\Delta ~\text{N}_{OT}$ 表现出 36% 的减少，当 ${f}$ 从 10 Hz 增加到 1 MHz。此外，这 ${f}$ -依赖 $\Delta ~\text{N}_{OT}$ 主要分布在 ${\text{E}_{v}}$ 和 ${\text{E}_{i}}$ ，并表现出可见的 ${f}$ - 周围能量密度的依赖峰值 ${\text{E}_{c}}$ .