In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect transistor (FET) with variations of active area specifications including number of vertically stacked channels, metal gate thickness, and channel width, is investigated using TCAD simulations. Our research suggests that varying these architecture parameters not only affect overall performance of sub-5-nm node GAA nanoplate FET such as on-current degradation and time-delay, but also greatly impact thermal reliability such as lattice temperature and thermal resistance, which are comprehensively analyzed using the Figure of Merit (FoM). Furthermore, thermal reliability of GAA nanoplate-FET is analyzed from perspective of Hot Carrier Injection (HCI)/Bias Temperature Instability (BTI) lifetime variation using maximum lattice temperature ( ${T}_{L,max}$ ) and metal gate thickness ( ${T}_{M}$ ).

中文翻译：

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先进的亚 5 纳米节点 Nanoplate FET 的自热和电热特性

在本文中，研究了具有不同有源区规格（包括垂直堆叠通道数、金属栅极厚度和通道宽度）的全环栅 (GAA) 纳米板场效应晶体管 (FET) 的自热效应 (SHE)使用 TCAD 模拟。我们的研究表明，改变这些架构参数不仅会影响亚 5 纳米节点 GAA 纳米板 FET 的整体性能，例如导通电流退化和时间延迟，还会极大地影响热可靠性，例如晶格温度和热阻，它们是使用品质因数进行全面分析（FOM）。此外，从热载流子注入的角度分析了 GAA nanoplate-FET 的热可靠性（人机交互)/偏置温度不稳定性 (BTI) 使用最大晶格温度的寿命变化 ( ${T}_{L,max}$ ) 和金属栅极厚度 ( ${T}_{M}$ ）。