In this letter, we demonstrate the well-behaved operation of (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with excellent electrical characteristics. High crystal quality (111) GOI substrates for the fabrication of (111) GOI nMOSFETs were prepared by a smart-cut process combined with an annealing process at 550 °C. Excellent electrical properties of the (111) GOI substrates were achieved by using relatively low ion implantation (I/I) dose condition of ${4}\times {10}^{{16}}$ cm−2. (111) GOI nMOSFETs were fabricated on these substrates, and the electrical characteristics were compared to those of the (100) GOI and (111) bulk ones. It is experimentally proved that the (111) GOI nMOSFET provides higher drive current and higher mobility than those of (100) GOI ones. In particular, the record high effective electron mobility of 943 cm2/Vs among reported GOI nMOSFETs is achieved for the present (111) GOI nMOSFETs.

中文翻译：

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通过智能切割技术制造的 (111) Ge-on-insulator n 沟道 MOSFET 的操作

在这封信中，我们展示了具有优异电气特性的 (111) 绝缘体上 (GOI) n 沟道金属氧化物半导体场效应晶体管 (nMOSFET) 的良好运行。用于制造 (111) GOI nMOSFET 的高晶体质量 (111) GOI 衬底是通过智能切割工艺结合 550°C 的退火工艺制备的。通过使用 ${4}\times {10}^{{16}}$ cm−2 的相对较低的离子注入 (I/I) 剂量条件，可以实现 (111) GOI 衬底的优异电性能。(111) GOI nMOSFET 在这些衬底上制造，并将电气特性与 (100) GOI 和 (111) 块体的电气特性进行比较。实验证明，(111) GOI nMOSFET 比(100) GOI nMOSFET 提供更高的驱动电流和更高的迁移率。特别是，