A heterojunction diode between n-type amorphous indium-gallium-zinc-oxide (a-IGZO) and p-type nickel oxide is experimentally demonstrated with self-aligned junction termination. The diode has an abrupt, non-destructive breakdown behavior, and the avalanche breakdown is confirmed by the positive temperature coefficient of the breakdown voltage. The room-temperature breakdown voltage of the device is 33 V, and the extracted critical breakdown electrical field ( ECR{E}_{CR} ) is 2.7 MV/cm. The ECR{E}_{CR} is one order of magnitude higher than that of single-crystal silicon, making a-IGZO promising for power electronics and other high-voltage applications.

中文翻译：

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从n-铟镓锌氧化物/p+-镍氧化物异质结二极管的雪崩击穿中提取非晶铟镓锌氧化物的临界击穿电场


实验证明了 n 型非晶氧化铟镓锌 (a-IGZO) 和 p 型氧化镍之间的异质结二极管具有自对准结终端。二极管具有突然的、非破坏性的击穿行为，雪崩击穿是通过击穿电压的正温度系数来确认的。该器件的室温击穿电压为33 V，提取的临界击穿电场(ECR{E}_{CR})为2.7 MV/cm。 ECR{E}_{CR}比单晶硅高一个数量级，使得a-IGZO在电力电子和其他高压应用中具有广阔的前景。