Here, the electronic properties and ballistic transport properties of two-dimensional(2D) ZrNBr are comprehensively investigated by the nonequilibrium Green's function coupled with density functional theory. 2D ZrNBr has a wide direct band gap of 1.82 eV with the highest mobility of 8700 cm 2 V -1 s -1 . Both then-and p-type 2D ZrNBr MOSFETs with 5-nm channel length hold the on-currents above 2300 μA/μm for high-performance devices and an on/off ratio exceeding 106 for low-power applications, which is of great value for the design of complementary circuits in 2D electronics. In addition, the energy-delay products of the single 2D ZrNBr MOSFETs and the 32-bit Arithmetic Logic Unit show more potential compared to other 2D materials and CMOS proposals. Thus, this work broadens a promising path towards beyond-silicon electronic systems.

中文翻译：

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高性能和低功耗低于 5 nm 二维 ZrNBr MOSFET 中的弹道传输


本文通过非平衡格林函数与密度泛函理论相结合，全面研究了二维（2D）ZrNBr 的电子性质和弹道输运性质。 2D ZrNBr 具有1.82 eV 的宽直接带隙，最高迁移率为8700 cm 2 V -1 s -1 。 5nm沟道长度的n型和p型2D ZrNBr MOSFET对于高性能器件来说，其导通电流都在2300μA/μm以上，对于低功耗应用来说，开/关比超过106，具有很大的价值用于二维电子学中互补电路的设计。此外，与其他2D材料和CMOS方案相比，单个2D ZrNBr MOSFET和32位算术逻辑单元的能量延迟产品显示出更大的潜力。因此，这项工作拓宽了通往超硅电子系统的有希望的道路。