We found that during spin-coating and annealing processes, the ambient humidity can have obvious impact on the characteristics of p-channel copper oxide thin-film transistors (TFTs). We studied such impact in great details along with the device operational stability. A dry deposition atmosphere (relative humidity, ${\mathrm {RH}} \le20$ %) is necessary for the best device performance, including a hole mobility of 0.1 cm $^{{2}}\,\,\text{V}^{{-1}}\,\,\text{s}^{{-1}}$ , an on/off current ratio of $> 10^{{4}}$ , and high operational stability (< 2 V threshold voltage shift after 5.5 h of bias stress), attributable to residues with fewer hydroxide defects. These findings offer a clear inspiration for achieving highly stable and reproducible p-channel oxide TFTs through a low-cost solution process.

中文翻译：

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湿度对溶液处理氧化铜晶体管性能和稳定性的影响

我们发现在旋涂和退火过程中，环境湿度会对 p 沟道氧化铜薄膜晶体管 (TFT) 的特性产生明显影响。我们非常详细地研究了这种影响以及设备运行稳定性。干燥的沉积气氛（相对湿度， ${\mathrm {RH}} \le20$ %) 是获得最佳器件性能所必需的，包括 0.1 cm 的空穴迁移率 $^{{2}}\,\,\text{V}^{{-1}}\,\,\text{s}^{{-1}}$ ，开/关电流比为 $> 10^{{4}}$ 和高操作稳定性（偏置应力 5.5 小时后阈值电压漂移 < 2 V），这归因于具有较少氢氧化物缺陷的残留物。这些发现为通过低成本解决方案实现高度稳定和可重复的 p 沟道氧化物 TFT 提供了明确的灵感。