This study demonstrates an enhancement-mode (E-mode) InAlN/GaN MOSHEMT on a silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown voltage ( $\text{V}_{\text {BD}}$ ) while maintaining a low on-resistance ( $\text{R}_{\text {on}}$ ). The E-mode operation is realized by a recessed tri-gate nanowire structure. The STDE functions as a drain-connected field plate (FP) to effectively distribute the electric field (E-field) around the drain contact edge, improving the $\text{V}_{\text {BD}}$ . Moreover, through the metal of the STDE directly contacting the 2-D electron gas (2-DEG) from the sidewalls, a low specific $\text{R}_{\text {on}}$ ( $\text{R}_{\text {on, sp}}$ ) is achieved. The proposed device with a gate-to-drain length ( $\text{L}_{\text {GD}}$ ) of $5~\mu \text{m}$ exhibits a threshold voltage ( $\text{V}_{\text {TH}}$ ) of +0.9 V, large maximum drain current ( $\text{I}_{\text {D, max}}$ ) of 815 ± 27 mA/mm, high $\text{I}_{\text {on}}/\text{I}_{\text {off}}$ ratio of 10¹⁰, steep subthreshold swing (SS) of 67 mV/decade, superior $\text{V}_{\text {BD}}$ of 830 V, and low $\text{R}_{\text {on, sp}}$ of 0.74 ± 0.04~\text{m}\Omega \cdot cm². With $\text{L}_{\text {GD}}$ of $10~\mu \text{m}$ , a $\text{V}_{\text {BD}}$ of 1190 V is achieved, corresponding to a $\text{R}_{\text {on, sp}}$ of 1.39 ± $0.07~\text{m}\Omega \cdot$ cm². These results reveal great potential for future E-mode power device applications.

中文翻译：

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具有肖特基三漏极扩展的硅上增强型 InAlN/GaN 功率 MOSHEMT

本研究展示了在具有肖特基三漏极扩展 (STDE) 的硅衬底上的增强模式（E 模式）InAlN/GaN MOSHEMT，以产生大击穿电压（ $\text{V}_{\text {BD}}$ ) 同时保持低导通电阻 ( $\text{R}_{\text {on}}$ ）。E-mode 操作是通过一个凹陷的三栅纳米线结构来实现的。STDE 用作漏极连接场板 (FP) 以有效地将电场 (E 场) 分布在漏极接触边缘周围，从而改善 $\text{V}_{\text {BD}}$ . 此外，通过 STDE 的金属从侧壁直接接触二维电子气 (2-DEG)，低比 $\text{R}_{\text {on}}$ ( $\text{R}_{\text {on, sp}}$ ） 已完成。所提出的具有栅极到漏极长度的器件（ $\text{L}_{\text {GD}}$ ） 的 $5~\mu \text{m}$ 表现出阈值电压（ $\text{V}_{\text {TH}}$ ) 的 +0.9 V，较大的最大漏极电流 ( $\text{I}_{\text {D, max}}$ ) 815 ± 27 mA/mm，高 $\text{I}_{\text {on}}/\text{I}_{\text {off}}$ 比率为 10 ¹⁰，陡峭的亚阈值摆幅 (SS) 为 67 mV/decade，优越 $\text{V}_{\text {BD}}$ 830 V，低 $\text{R}_{\text {on, sp}}$ 0.74 ± 0.04~\text{m}\Omega \cdot cm ²。和 $\text{L}_{\text {GD}}$ 的 $10~\mu \text{m}$ ， 一种 $\text{V}_{\text {BD}}$ 达到 1190 V，对应于 $\text{R}_{\text {on, sp}}$ 1.39 ± $0.07~\text{m}\Omega \cdot$ 厘米²。这些结果揭示了未来 E 模式功率器件应用的巨大潜力。