Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves on-resistance and turn-off loss trade-off. The simulation results show 34% lower on-resistance with 16% lower turn-off loss for 40 V-class device and 21% lower on-resistance with 10% lower turn-off loss for 100 V-class device.

中文翻译：

---

辅助栅极 MOSFET 以改善导通电阻和关断损耗的权衡

辅助栅极 (AG) MOSFET 通过具有最佳栅极控制的新结构被提议用于低压功率 MOSFET 的低功耗操作。第二沟道和累积层降低了沟道和漂移电阻。此外，AG-MOSFET 的栅极控制降低了关断损耗。使用 TCAD 模拟分析了 40 和 100 V 级 AG-MOSFET 的特性。AG-MOSFET 改善了导通电阻和关断损耗的权衡。仿真结果显示，40 V 级器件的导通电阻降低 34%，关断损耗降低 16%；100 V 级器件的导通电阻降低 21%，关断损耗降低 10%。