In this study, we investigated diamond metal oxide semiconductor field effect transistors (MOSFETs) with NO₂ p-type doping and Al₂O₃ passivation layer fabricated on a high-quality heteroepitaxial single crystal (001) diamond substrate called Kenzan diamond^®. MOSFETs with a gate length of 1.4 $\mu \text{m}$ and nearly zero source-gate spacing exhibited a high drain current density of −776 mA/mm with a negligible gate leakage current ( $< 0.1~\mu \text{A}$ /mm). MOSFETs with a gate-to-drain length of 4.8 $\mu \text{m}$ delivered a high off-state breakdown voltage (−618 V) at an average breakdown field of 1.2 MV/cm and a specific on-resistance of 2.63 $\text{m}\Omega \cdot $ cm². Baliga’s Figure-Of-Merits was calculated as 145 MW/cm² and the anticipated maximum power density was 12 W/mm. The diamond MOSFET was improved with high crystal quality.

中文翻译：

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具有 NO2 p 型掺杂和 Al2O3 钝化层的 145-MW/cm2 异质外延金刚石 MOSFET

在这项研究中，我们研究了具有 NO ₂ p 型掺杂和 Al ₂ O ₃钝化层的金刚石金属氧化物半导体场效应晶体管 (MOSFET)，该晶体管在称为 Kenzan diamond ^®的高质量异质外延单晶 (001) 金刚石衬底上制造。栅极长度为 1.4 的 MOSFET $\mu \text{m}$ 几乎为零的源极-栅极间距表现出-776 mA / mm的高漏极电流密度，栅极漏电流可以忽略不计（ $< 0.1~\mu \text{A}$ /毫米）。栅极至漏极长度为 4.8 的 MOSFET $\mu \text{m}$ 在 1.2 MV/cm 的平均击穿场和 2.63 的特定导通电阻下提供高断态击穿电压 (-618 V) $\text{m}\Omega \cdot $ 厘米²。Baliga 的品质因数计算为 145 MW/cm ²，预期最大功率密度为 12 W/mm。金刚石 MOSFET 得到改进，具有高晶体质量。