We report a highly sensitive thin-film transistor (TFT)-based temperature sensor with an ambient air-processed organic-inorganic hybrid perovskite, methylammonium lead iodide (MAPbI3), semiconductor. The threshold voltage of MAPbI3 TFTs shows a strong linear temperature dependency with a temperature coefficient of −200±10 mV/K – making them good temperature sensors. TFTs with an inorganic (PbI2)-rich or organic (MAI)-rich semiconductor exhibit less temperature sensitivity than those with the stoichiometric MAPbI3 film – thus attributing the high temperature sensitivity to trap states in the hybridized MAPbI3 perovskite structure. We show that ambipolar transport in MAPbI3 TFTs can be exploited to widen their temperature sensing window and demonstrate high sensing capability of a temperature sensor, consisting of a single MAPbI3 TFT in the diode configuration (with drain and gate shorted).

中文翻译：

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高灵敏度和环境空气处理的混合钙钛矿 TFT 温度传感器

我们报告了一种基于高灵敏度薄膜晶体管 (TFT) 的温度传感器，其具有环境空气处理的有机-无机杂化钙钛矿、甲基碘化铅 (MAPbI3) 半导体。MAPbI3 TFT 的阈值电压显示出强烈的线性温度依赖性，温度系数为 -200±10 mV/K，使其成为良好的温度传感器。具有富含无机 (PbI2) 或富含有机 (MAI) 的半导体的 TFT 比具有化学计量的 MAPbI3 薄膜的 TFT 表现出更低的温度敏感性——因此将高温敏感性归因于杂化 MAPbI3 钙钛矿结构中的陷阱态。我们表明可以利用 MAPbI3 TFT 中的双极传输来扩大它们的温度传感窗口并展示温度传感器的高传感能力，