We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.

中文翻译：

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自上而下制造的可重构 FET，具有两个对称的高电流导通状态

我们展示了一种基于硅纳米线的自上而下制造的可重构场效应晶体管 (RFET)，可以静电编程为 p 和 n 配置。与其他自上而下制造的 RFET 相比，该器件结合了传输特性的高度对称性、两种配置中的高 ON/OFF 电流比和卓越的电流密度。两个 NiSi2/Si 肖特基结在导线内部形成并单独门控。窄的 omega 门控通道是通过重复的 SiO2 蚀刻和生长序列以及共形 TiN 沉积制造的。栅极和肖特基接触金属功函数以及肖特基结的氧化物引起的压应力经过调整，在绝对值相同的栅极电压和相同的漏极电压下，p-电流仅比 n-电流高 1.6 倍。