This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of $300~\mu \text{m}$ -deep and $50~\mu \text{m}$ -wide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 $\text{m}\Omega $ at room temperature and superconductivity below 1.28 K were measured by a cross-bridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.

中文翻译：

---

用于量子 3D 集成的直流溅射铝超导高纵横比硅通孔

本文介绍了用铝直流溅射的超导高深宽比硅通孔的制造和电气特性。完全保形且无空隙的涂层 $300~\mu \text{m}$ - 深和 $50~\mu \text{m}$ 通过为轴对称通孔定制漏斗状侧壁轮廓，使具有 CMOS 兼容且广泛使用的超导体 Al 的宽通孔成为可能。单通孔电阻低至 80.44 $\text{m}\Omega $ 在室温下和低于 1.28 K 的超导性是通过跨桥开尔文电阻器结构测量的。因此，这项工作展示了功能超导中介层的制造，适用于硅基量子计算架构的高密度 3D 集成。