This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzed as the guard ring material, which forms a heterojunction with the Ga$_2$O$_3$ drift layer. Guard ring with non-polar graded p-AlGaN with a bandgap larger than Ga$_2$O$_3$ is found to show the best performance in terms of screening the electric field at the metal edges. The proposed guard ring configuration is also compared with a reported Ga$_2$O$_3$ Schottky diode with no guard ring and a structure with a high resistive Nitrogen-doped guard ring. The optimized design is predicted to have breakdown voltage as high as 5.3 kV and a specific on-resistance of 3.55 m$\Omega$-cm$^2$ which leads to an excellent power figure of merit of 7.91 GW/cm$^2$.

中文翻译：

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设计 $\beta$-Ga$_2$O$_3$ 肖特基势垒二极管，具有增强击穿的 p 型 III-氮化物保护环

这项工作展示了一种新型 Ga$_2$O$_3$ 垂直肖特基二极管的静电分析，该二极管具有三种不同的保护环配置，以减少金属边缘的峰值电场。模拟分析了高掺杂p型GaN、p型非极性AlGaN和极化掺杂渐变p-AlGaN作为保护环材料，与Ga$_2$O$_3$漂移层形成异质结。发现具有带隙大于 Ga$_2$O$_3$ 的非极性渐变 p-AlGaN 的保护环在屏蔽金属边缘的电场方面表现出最佳性能。所提出的保护环配置还与报道的 Ga$_2$O$_3$ 肖特基二极管没有保护环和具有高电阻氮掺杂保护环的结构进行了比较。预计优化设计的击穿电压高达 5。