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Lasing of scarred mode near above threshold in a semiconductor microcavity laser.
Optics Letters ( IF 3.1 ) Pub Date : 2020-07-01 , DOI: 10.1364/ol.398465
In-Goo Lee , Chang-Hwan Yi , Ji-Won Lee , Jinhyeok Ryu , Sunjae Gwak , Kwang-Ryong Oh , Chil-Min Kim

We study a lasing of mode groups in a fully chaotic rounded D-shape InGaAsP semiconductor microcavity laser when an electrode is smaller than a cavity (inward gap). Although there are numerous unstable periodic orbits supporting resonances, a mode group localized on period-5 unstable periodic orbit is more competitive than the others for our laser configuration of the inward gap. By means of theoretical and numerical analyses with ray and wave dynamics, we show that the analyses well agree with our experimental results.

中文翻译:

在半导体微腔激光器中,在接近阈值以上时产生疤痕模。

我们研究了当电极小于腔(向内间隙)时,在完全混沌的圆形D形InGaAsP半导体微腔激光器中的模式群激射。尽管有许多不稳定的周期性轨道支持共振,但在我们的向内间隙激光结构中,位于周期5不稳定的周期性轨道上的模式组比其他模式组更具竞争力。通过射线和波动力学的理论和数值分析,我们表明这些分析与我们的实验结果非常吻合。
更新日期:2020-07-02
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