Low-temperature aluminum nitride (AlN) depositions were studied under low gas pressure conditions of 0.1 Pa. In order to operate under 0.1 Pa sputter-conditions, the magnetic mirror-type magnetron cathode (M3C) has been developed in the authors' studies. The plasma light-emission distributions generated by the M3C were observed at an input RF power of 5–100 W and an Ar gas pressure of 0.1–0.65 Pa. The M3C can operate effectively with both low gas pressure of 0.1 Pa (Ar) and low RF power of 5 W. The AlN films were deposited using a bare silicon substrate without external substrate heating. The c-axis oriented AlN film was obtained at 0.1 Pa (pure nitrogen), 100 W, and a target-to-substrate distance of 70 mm.

中文翻译：

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使用磁镜式磁控管阴极进行低气压操作的低温 AlN 薄膜沉积

在 0.1 Pa 的低气压条件下研究了低温氮化铝 (AlN) 沉积。为了在 0.1 Pa 溅射条件下运行，作者的研究中开发了磁镜式磁控管阴极 (M3C)。在 5-100 W 的输入射频功率和 0.1-0.65 Pa 的 Ar 气压下观察到 M3C 产生的等离子体发光分布。M3C 可以在 0.1 Pa (Ar) 的低气压和5 W 的低射频功率。AlN 薄膜是使用裸硅基板沉积的，没有外部基板加热。在 0.1 Pa（纯氮）、100 W 和 70 mm 的靶到衬底距离下获得 c 轴取向的 AlN 膜。