Self-aligned double patterning (SADP), or spacer lithography, is a widely used technique in the semiconductor industry for high-throughput nanoscale pattern definition and thus is of great significance for very-large-scale integration, large-area photonic device fabrications, and other applications. In a standard SADP flow, chemical vapor deposition or atomic layer deposition is used to deposit a conformal spacer layer, which is typically a dielectric material. The spacer composition and film quality will influence downstream critical dimension control. However, samples have to go through multiple processing environments, and fabrication complexity is thus increased. In this work, an in situ SADP process is proposed, with all the fabrication steps being integrated into a single process inside a commercially available plasma etching equipment. The spacer layer is a plasma-deposited fluorocarbon film, which has a uniform step coverage and a good etch selectivity to silicon. Various nanostructures have been fabricated to prove the capability of this technique. With its high integrity and technical convenience, this method can be promising to improve the throughput and efficiency of nanofabrication in the semiconductor industry, microelectromechanical systems, and photonic engineering.

中文翻译：

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以碳氟化合物为间隔层的集成原位自对准双图案化工艺

自对准双图案化 (SADP) 或间隔光刻，是半导体工业中广泛使用的用于高通量纳米级图案定义的技术，因此对于超大规模集成、大面积光子器件制造具有重要意义，和其他应用程序。在标准的 SADP 流程中，化学气相沉积或原子层沉积用于沉积共形间隔层，其通常是介电材料。隔离物成分和薄膜质量将影响下游关键尺寸控制。然而，样品必须经过多个处理环境，因此增加了制造复杂性。在这项工作中，提出了原位 SADP 工艺，将所有制造步骤集成到商用等离子体蚀刻设备内的单个工艺中。间隔层是等离子沉积的碳氟化合物薄膜，具有均匀的阶梯覆盖和对硅的良好蚀刻选择性。已经制造了各种纳米结构来证明这种技术的能力。凭借其高完整性和技术便利性，该方法有望提高半导体工业、微机电系统和光子工程中纳米制造的产量和效率。