The authors propose the use of a low-energy (sub-keV/atom) bismuth cluster ion beam for time-of-flight secondary ion mass spectrometry (TOF-SIMS). 2 keV Bi3+ at an incident angle of 65° generated bismuth-adducted secondary molecular ions [M + Bi]+, which are not observed under normal TOF-SIMS conditions. This low-energy Bi primary ion beam was used for the depth profiling of Irganox1010/Irganox1098 multilayered organic thin films. [M + Bi]+ gave a better dynamic range for both Irganox1010 and Irganox1098 layers. The results suggest that a 2 keV Bi3+ ion beam is more suitable for the depth profiling of organic thin films than a 54 keV Bi3++ ion beam of typical TOF-SIMS conditions.

中文翻译：

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铋在低能铋簇离子束下加成完整的分子离子 [M + Bi]+

作者建议使用低能量（亚 keV/原子）铋簇离子束进行飞行时间二次离子质谱 (TOF-SIMS)。2 keV Bi3+ 以 65° 的入射角生成铋加成的次级分子离子 [M + Bi]+，这在正常的 TOF-SIMS 条件下观察不到。这种低能 Bi 初级离子束用于 Irganox1010/Irganox1098 多层有机薄膜的深度分析。[M + Bi]+ 为 Irganox1010 和 Irganox1098 层提供了更好的动态范围。结果表明，在典型的 TOF-SIMS 条件下，2 keV Bi3+ 离子束比 54 keV Bi3++ 离子束更适合有机薄膜的深度分析。