Due to their electrical and physical properties, Si1−XGeX materials are widely used in microelectronic devices. In particular, the Ge component found within Si1−XGeX compounds is important for enhancing carrier mobility and altering the lattice constant of metal-oxide-semiconductor field-effect transistors. In this study, magnetic sector secondary ion mass spectrometry (magnetic sector SIMS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used to determine the accurate concentrations of major compositions present within binary alloy samples. However, quantitative SIMS analysis is limited by the matrix effect, which influences the sputter yield of an element in a compound and alters the secondary ionization yields. Quantitative deviations that were due to the matrix effect were reduced by using Cs cluster ions (MCs+ and MCs2+) instead of elemental ions; the SIMS results using the elements were, therefore, compared with those using MCs+ and MCs2+ cluster ions. In the case of Fe1−XNiX alloys that have a less matrix effect compared to Si1−XGeX alloys, both the Cs primary ion beam (Cs+) and an oxygen primary ion beam (O2+) were used to measure the Fe1−XNiX compositions. The quantitative results from the two different primary ion beams were then compared to understand the ionization process. Deviations in the quantitative values gained with the O2+ beam were lower than those obtained using the Cs+ primary ions, meaning that using oxygen as the primary ion improves the accuracy in quantifying Fe1−XNiX compounds. Other reliable tools for analysis such as atom probe tomography and femtosecond laser ablation inductively coupled plasma mass spectrometry were also used in the quantitative analysis, with results that were consistent with the most accurate results obtained using magnetic sector SIMS and ToF-SIMS.

中文翻译：

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使用 SIMS、原子探针断层扫描和飞秒激光烧蚀电感耦合等离子体质谱与 Si1-XGeX 和 Fe1-X NiX 二元合金进行定量分析的比较

由于其电气和物理特性，Si1-XGeX 材料被广泛用于微电子设备。特别是，在 Si1-XGeX 化合物中发现的 Ge 成分对于提高载流子迁移率和改变金属氧化物半导体场效应晶体管的晶格常数很重要。在这项研究中，磁扇形二次离子质谱法 (磁扇形 SIMS) 和飞行时间二次离子质谱法 (ToF-SIMS) 用于确定二元合金样品中存在的主要成分的准确浓度。然而，定量 SIMS 分析受到基质效应的限制，基质效应会影响化合物中元素的溅射产率并改变二次电离产率。通过使用 Cs 簇离子（MCs+ 和 MCs2+）代替元素离子，减少了由于基质效应引起的定量偏差；因此，使用这些元素的 SIMS 结果与使用 MCs+ 和 MCs2+ 簇离子的结果进行了比较。在与 Si1-XGeX 合金相比具有较小基体效应的 Fe1-XNiX 合金的情况下，Cs 初级离子束 (Cs+) 和氧初级离子束 (O2+) 都用于测量 Fe1-XNiX 成分。然后比较来自两种不同初级离子束的定量结果以了解电离过程。使用 O2+ 束获得的定量值的偏差低于使用 Cs+ 初级离子获得的那些，这意味着使用氧作为初级离子提高了定量 Fe1-XNiX 化合物的准确性。