Topological insulator (TI) materials which are conductive at the surface but insulating in the bulk have drawn much attention in the past decade due to their fascinating properties and potential application in the field of spintronics, quantum computing, topological superconductivity and next generation electronics. In the search of three-dimensional TIs, half-Heusler compounds are the new entrants. Half-Heusler compounds are equiatomic ternary compounds with cubic symmetry. Due to the availability of a large pool of elements in the half Heusler family, the physical properties of these materials can be tuned by choosing the desired combination of elements. In this perspective, we have briefly discussed the development of structural relations, the quantum hall effect, Landau quantization, and topological properties of a few representative systems in the half-Heusler family, including methods by which they are studied and characterized such as Angle Resolved Photoemission Spectroscopy, Shubnikov-de-Hass Oscillations and Nuclear Magnetic Resonance.

中文翻译：

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基于稀土的半赫斯勒拓扑量子材料：透视

拓扑绝缘体 (TI) 材料表面导电但体绝缘，由于其迷人的特性和在自旋电子学、量子计算、拓扑超导和下一代电子学领域的潜在应用，在过去十年中备受关注。在寻找三维 TI 的过程中，半赫斯勒化合物是新进入者。半赫斯勒化合物是具有立方对称性的等原子三元化合物。由于半 Heusler 家族中有大量元素可用，因此可以通过选择所需的元素组合来调整这些材料的物理特性。从这个角度，我们简要讨论了结构关系的发展，量子霍尔效应，朗道量子化，