Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-based NIR photodetectors based on this property but with low detection efficiencies. Here, we investigate the differences between the optical and photocurrent properties of Au-hyperdoped Si. Although defects introduced during fabrication of these materials may not exhibit significant optical absorption, we show that they can produce a measurable photocurrent under NIR illumination. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials is yet to be achieved and we discuss these opportunities in light of our results. This work thus represents a step forward in demonstrating the viability of using impurity-hyperdoped Si materials for NIR photodetection.

中文翻译：

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理解和优化金超掺杂硅红外光电探测器

金超掺杂硅吸收近红外 (NIR) 光，最近的努力已经成功地生产出基于这种特性的硅基 NIR 光电探测器，但检测效率低。在这里，我们研究了 Au 超掺杂 Si 的光学和光电流特性之间的差异。尽管在这些材料的制造过程中引入的缺陷可能不会表现出显着的光吸收，但我们表明它们可以在 NIR 照明下产生可测量的光电流。我们的结果表明杂质超掺杂硅材料的最佳效率尚未实现，我们根据我们的结果讨论了这些机会。因此，这项工作代表了在证明使用杂质超掺杂硅材料进行 NIR 光电检测的可行性方面向前迈进了一步。