Deposition of semiconductors on bendable substrates is a crucial step toward flexible circuitry and deposition by a roll-to-roll process. Since most bendable substrates have limited temperature stability (normally degradation starts between 150 °C and 300 °C), processing temperatures are typically below that of rigid substrates. Amorphous oxide semiconductors (AOSs) such as indium gallium zinc oxide (IGZO) can be fabricated at room temperature (RT) and exhibit electron mobilities >10 cm2 V−1 s−1 being a pre-requisite for application in backplanes of displays. While IGZO is already commercially exploited, the search for alternative materials is highly relevant because indium and gallium are rare and expensive. Zinc tin oxide (ZTO) is a promising AOS since zinc and tin are highly abundant and cheap. In this letter, we discuss RT-fabricated n-type ZTO thin films used as the channel material in flexible inverter circuits based on junction field-effect transistors. RT-fabricated nickel oxide is used as a semitransparent p-type gate material. The devices are fabricated on flexible polyimide and exhibit an excellent peak gain magnitude of 464 and uncertainty level as low as 130 mV at a supply voltage of only 3 V. They are characterized before and after bending at various radii. Even after bending at 2 mm radius, the inverters behave still very well.

中文翻译：

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基于柔性基板上的非晶氧化锌锡的低电压、高增益逆变器

在可弯曲基板上沉积半导体是通过卷对卷工艺实现柔性电路和沉积的关键步骤。由于大多数可弯曲基材的温度稳定性有限（通常在 150 °C 到 300 °C 之间开始降解），因此加工温度通常低于刚性基材的温度。非晶氧化物半导体 (AOS)，例如氧化铟镓锌 (IGZO) 可以在室温 (RT) 下制造，并且表现出大于 10 cm2 V-1 s-1 的电子迁移率，这是应用于显示器背板的先决条件。虽然 IGZO 已经被商业开发，但寻找替代材料非常重要，因为铟和镓稀有且昂贵。氧化锌锡 (ZTO) 是一种很有前途的 AOS，因为锌和锡含量丰富且价格低廉。在这封信中，我们讨论了 RT 制造的 n 型 ZTO 薄膜，用作基于结型场效应晶体管的柔性逆变器电路中的沟道材料。RT 制造的氧化镍用作半透明 p 型栅极材料。这些器件是在柔性聚酰亚胺上制造的，在仅 3 V 的电源电压下表现出出色的 464 峰值增益幅度和低至 130 mV 的不确定性水平。它们在各种半径弯曲之前和之后进行表征。即使在弯曲半径为 2 毫米后，逆变器的性能仍然非常好。这些器件是在柔性聚酰亚胺上制造的，在仅 3 V 的电源电压下表现出出色的 464 峰值增益幅度和低至 130 mV 的不确定性水平。它们在各种半径弯曲之前和之后进行表征。即使在弯曲半径为 2 毫米后，逆变器的性能仍然非常好。这些器件是在柔性聚酰亚胺上制造的，在仅 3 V 的电源电压下表现出出色的 464 峰值增益幅度和低至 130 mV 的不确定性水平。它们在不同半径弯曲之前和之后进行了表征。即使在弯曲半径为 2 毫米后，逆变器的性能仍然非常好。