A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO₂/Si substrate. An asymmetric dual-grating gate was implemented on the h-BN top flake. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. We subsequently demonstrated that the device can be used for terahertz sensing and inspection of hidden metallic objects at room temperature.

中文翻译：

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用于检测太赫兹辐射的非对称双栅栅石墨烯FET

制作了具有不对称双栅栅的基于石墨烯的场效应晶体管，并在太赫兹辐射的两个频率（0.15 THz和0.3 THz）的激励下进行了表征。将石墨烯片封装在两片h-BN之间，并放置在高度掺杂的SiO ₂ / Si衬底上。在h-BN顶部薄片上实现了非对称双光栅门。即使没有使用天线耦合入射的辐射，在室温至0.3 THz的激发下仍能测量出清晰的取决于栅极偏置的光电流。随后，我们证明了该设备可用于太赫兹感测和在室温下检查隐藏的金属物体。