Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics. To achieve a high-performance solution-processed metal-oxide TFT at a low processing temperature, simple fluorine doping was performed for obtaining a solution-processed metal-oxide semiconductor through efficient metal aqua complexation. The TFTs fabricated using conventional IGZO and fluorine-doped IGZO (IGZO:F) precursors were evaluated. The IGZO:F fabricated TFT demonstrated higher mobility, better switching characteristics, and enhanced overall TFT performance. This simple, low-temperature fluorine doping technique improved the solution-processed TFT for future scalable and low-cost TFTs.

中文翻译：

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氟掺杂对溶液处理的In-Ga-Zn-O薄膜晶体管的影响

使用金属氧化物半导体的简单而简便的溶液处理薄膜晶体管（TFT）有望用于生产大面积电子产品。为了在低处理温度下获得高性能的溶液处理的金属氧化物TFT，进行了简单的氟掺杂，以通过有效的金属水络合获得溶液处理的金属氧化物半导体。评估了使用常规IGZO和掺氟IGZO（IGZO：F）前驱体制造的TFT。IGZO：F制成的TFT表现出更高的迁移率，更好的开关特性和增强的TFT性能。这种简单的低温氟掺杂技术改进了溶液处理的TFT，可用于将来的可扩展且低成本的TFT。