We report on the effect of sputtering deposition of indium tin oxide (ITO) as the transparent conductive oxide layer on the passivation performance of hydrogenated amorphous silicon/crystalline silicon heterojunctions. The influence of sputtering damage on passivation performance is studied by varying the ITO layer thickness from 0 nm to 80 nm. The passivation performance decreases considerably up to 10 nm and increases gradually from 20 nm to 80 nm, indicating that damage and recovery stages are present during the sputtering process. We focus on the injection energy as the cause of the recovery phenomenon. To optimize the passivation performance by intentionally enhancing the effect of the recovery stage while minimizing the initial damage at the heterointerface, we develop a two-step sputtering process in which the radiofrequency power is changed from 50 W to 100 W during deposition to prepare ITO double layers. Two step sputtering gives the lower damage, and the properties of ITO double layers are better than those of ITO single layers. These results show that two-step sputtering can realize greater a-Si:H passivation. Furthermore, better optical properties are obtained in ITO double layers compared with conventional ITO single layers. Therefore, modulating the radiofrequency power during ITO deposition can offer higher conversion efficiency.

中文翻译：

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氧化铟锡双层沉积对氢化非晶硅/晶体硅异质结的影响

我们报告了溅射沉积铟锡氧化物（ITO）作为透明导电氧化物层对氢化非晶硅/结晶硅异质结钝化性能的影响。通过将ITO层厚度从0 nm更改为80 nm，研究了溅射损伤对钝化性能的影响。钝化性能在10 nm以下会显着降低，并从20 nm逐渐增加到80 nm，这表明在溅射过程中存在损坏和恢复阶段。我们关注注入能量作为恢复现象的原因。为了通过有意增强恢复阶段的效果，同时最大程度地减少异质界面处的初始损坏，来优化钝化性能，我们开发了两步溅射工艺，其中在沉积过程中射频功率从50 W变为100 W，以制备ITO双层。两步溅射的损伤较小，ITO双层的性能优于ITO单层。这些结果表明，两步溅射可以实现更大的a-Si：H钝化。此外，与传统的ITO单层相比，在ITO双层中获得了更好的光学性能。因此，在ITO沉积期间调制射频功率可以提供更高的转换效率。H钝化。此外，与传统的ITO单层相比，在ITO双层中获得了更好的光学性能。因此，在ITO沉积期间调制射频功率可以提供更高的转换效率。H钝化。此外，与传统的ITO单层相比，在ITO双层中获得了更好的光学性能。因此，在ITO沉积期间调制射频功率可以提供更高的转换效率。