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Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-30 , DOI: 10.1021/acsaelm.0c00245 John Wellington John 1 , Veerendra Dhyani 1 , Yordan M. Georgiev 2, 3, 4 , Anushka S. Gangnaik 2 , Subhajit Biswas 2 , Justin D. Holmes 2 , Amit K. Das 5 , Samit K. Ray 6 , Samaresh Das 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-30 , DOI: 10.1021/acsaelm.0c00245 John Wellington John 1 , Veerendra Dhyani 1 , Yordan M. Georgiev 2, 3, 4 , Anushka S. Gangnaik 2 , Subhajit Biswas 2 , Justin D. Holmes 2 , Amit K. Das 5 , Samit K. Ray 6 , Samaresh Das 1
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Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carriers in n-Ge NWs in the presence of infrared light. The trapping of photocarriers leads to high recombination of carriers in the presence of light, which is dominant in the n-type devices. Furthermore, a carrier trapping model was used to investigate the trapping and detrapping phenomena and it was observed that the NPC in n-Ge occurred, because of the fast trapping of mobile charge carriers by interfacial states. The performance of n-type devices was compared with p-type NW detectors, which shows the conventional positive photoconductive behavior with high gain of 104. The observed results can be used to study the application of Ge NWs for various optoelectronic applications involving light tunable memory device applications.
中文翻译：
热电子俘获在高度掺杂的锗纳米线中的超高负红外光电导
在这里，我们报告了在高砷掺杂的锗纳米线（Ge NWs）中对红外光的负光电导（NPC）效应的观察结果。通过光辅助开尔文探针力显微镜研究了NPC，该显微镜显示了在存在红外光的情况下n- Ge NWs中载流子的消耗。捕获光载流子导致在光的存在下载流子的高度重组，这在n型器件中占主导地位。此外，利用载流子俘获模型研究了俘获和去俘获现象，并且观察到由于界面态快速俘获了移动电荷载流子，n- Ge中发生了NPC 。n型器件的性能与p型NW检测器，以10 4的高增益显示了常规的正光电导特性。观察到的结果可用于研究Ge NW在涉及光可调存储器件应用的各种光电应用中的应用。
更新日期：2020-07-28
中文翻译：
热电子俘获在高度掺杂的锗纳米线中的超高负红外光电导
在这里，我们报告了在高砷掺杂的锗纳米线（Ge NWs）中对红外光的负光电导（NPC）效应的观察结果。通过光辅助开尔文探针力显微镜研究了NPC，该显微镜显示了在存在红外光的情况下n- Ge NWs中载流子的消耗。捕获光载流子导致在光的存在下载流子的高度重组，这在n型器件中占主导地位。此外，利用载流子俘获模型研究了俘获和去俘获现象，并且观察到由于界面态快速俘获了移动电荷载流子，n- Ge中发生了NPC 。n型器件的性能与p型NW检测器，以10 4的高增益显示了常规的正光电导特性。观察到的结果可用于研究Ge NW在涉及光可调存储器件应用的各种光电应用中的应用。
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