Abstract Titanium aluminum nitride (TiAlN) thin films were deposited on Si(1 0 0 ) substrate using titanium and aluminum targets in 1:1 ratio at various N2 flow rates using ion beam sputtering (IBS) technique. The morphology, particle and crystallite size of TiAlN thin films were estimated by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and grazing incidence X-ray diffraction (GIXRD) technique, respectively. The SEM images of the TiAlN thin films revealed smooth and uniform coating, whereas AFM images confirmed the particle size varying from 2.5 nm to 8.8 nm, respectively. The crystallite size and lattice strain were observed to vary from 4.79 nm to 5.5 nm and 0.0916 and 0.0844, respectively, with an increase in N2 flow rate in the TiAlN thin films. The X-ray absorption near edge structure (XANES) results showed Ti L, N K and O K-edges of TiAlN coating within a range of 450 eV to 470 eV, 395 eV to 410 eV and 480 eV to 580 eV photon energy, respectively. The electronic structure and chemical bonding of state of c-TiAlN thin film of Ti L, N K and O K-edges were analyzed through semi-empirical curve fitting technique.

中文翻译：

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通过离子束溅射技术在不同 N2 流速下沉积的 TiAlN 薄膜的微观结构和键合结构分析

摘要 使用离子束溅射 (IBS) 技术，以 1:1 的钛和铝靶在不同的 N2 流速下，在 Si(1 0 0 ) 衬底上沉积氮化钛铝 (TiAlN) 薄膜。TiAlN 薄膜的形貌、颗粒和微晶尺寸分别通过场发射扫描电子显微镜 (FE-SEM)、原子力显微镜 (AFM) 和掠入射 X 射线衍射 (GIXRD) 技术估计。TiAlN 薄膜的 SEM 图像显示出光滑均匀的涂层，而 AFM 图像证实了粒径分别从 2.5 nm 到 8.8 nm 不等。随着 TiAlN 薄膜中 N2 流速的增加，观察到微晶尺寸和晶格应变分别从 4.79 nm 到 5.5 nm 和 0.0916 和 0.0844。X 射线吸收近边结构 (XANES) 结果显示 TiAlN 涂层的 Ti L、NK 和 O K 边缘分别在 450 eV 至 470 eV、395 eV 至 410 eV 和 480 eV 至 580 eV 光子能量范围内. 通过半经验曲线拟合技术分析了Ti L、NK和O K边缘的c-TiAlN薄膜的电子结构和化学键合状态。