Abstract This paper is a part of a natural dye solar cell project. Conductive transparent oxide (CTO) films have been deposited onto preheated glass substrates using a spray pyrolysis technique. The optical, electrical, structural properties as well as thermal annealing and gamma radiation response were studied. The average optical energy gap of doped films for direct allowed and direct forbidden transitions were found to be 3.92 and 3.68 eV, respectively. The plasmon frequency and plasmon energy after doping were found to be 3.48 × 1014 s −1 and 0.23 eV. The negative absorbance of the doped film was observed in UV-Vis range after applying both thermal annealing and γ-dose irradiation with 22 kGy. The negative refractive index of the doped film in UV range (220 – 300 nm) is promising for optical applications. The electron mobility μe reached a maximum of 27.4 cm2 V−1 s−1 for Sb concentration of 10 %. The corresponding resistivity ρ, and sheet resistance Rs reached their minimum values of 1.1 × 10−3 Ω cm and 35 Ω sq−1, respectively. The dopant concentration has been increased from 4.13 × 1019 to 2.1 × 1020cm−3. The doped film was found to exhibit three diffraction peaks associated with (2 2 2), (2 0 0), and (2 1 1) reflection planes, of which the peak of (2 2 2) of Sb2O3 and the peak of (2 0 0) were very close.

中文翻译：

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γ辐射响应下SnO2:Sb薄膜的等离子体纳米结构

摘要 本文是天然染料太阳能电池项目的一部分。导电透明氧化物 (CTO) 薄膜已使用喷雾热解技术沉积在预热的玻璃基板上。研究了光学、电学、结构特性以及热退火和伽马辐射响应。发现直接允许跃迁和直接禁止跃迁的掺杂薄膜的平均光能隙分别为 3.92 和 3.68 eV。发现掺杂后的等离子体频率和等离子体能量为 3.48 × 1014 s -1 和 0.23 eV。在应用热退火和 22 kGy 的 γ 剂量照射后，在 UV-Vis 范围内观察到掺杂膜的负吸光度。掺杂薄膜在紫外范围 (220 – 300 nm) 的负折射率有希望用于光学应用。对于 10% 的 Sb 浓度，电子迁移率 μe 达到最大值 27.4 cm2 V-1 s-1。相应的电阻率 ρ 和薄层电阻 Rs 分别达到了它们的最小值 1.1 × 10−3 Ω cm 和 35 Ω sq−1。掺杂浓度已从 4.13 × 1019 增加到 2.1 × 1020cm-3。发现掺杂薄膜表现出与 (2 2 2)、(2 0 0) 和 (2 1 1) 反射面相关的三个衍射峰，其中 Sb2O3 的 (2 2 2) 峰和 ( 2 0 0) 非常接近。