Abstract MoO3 films were deposited by RF magnetron sputtering technique on glass and silicon substrates held at 473 K by sputtering of metallic molybdenum target at an oxygen partial pressure of 4 × 10−2 Pa and at different sputtering pressures in the range of 2 Pa to 6 Pa. The influence of sputtering pressure on the structure and surface morphology, electrical and optical properties of the MoO3 thin films was studied. X-ray diffraction studies suggest that the films deposited at a sputtering pressure of 2 Pa were polycrystalline in nature with mixed phase of α- and β-phase MoO3, while those formed at sputtering pressure of 4 Pa and above were of α-phase MoO3. Scanning electron micrographs showed a decrement in the size of the particles and their shapes changed from needle like structure to dense films with the increase of sputtering pressure. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic vibration modes of Mo=O, Mo–O and Mo–O–Mo related to MoO3. Electrical resistivity of the MoO3 films decreased from 6.0 × 104 Ω cm to 2 × 104 Ω cm with an increase of sputtering pressure from 2 Pa to 6 Pa, respectively. Optical band gap of the films decreased from 3.12 eV to 2.86 eV with the increase of sputtering pressure from 2 Pa to 6 Pa, respectively.

中文翻译：

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溅射压力影响射频磁控溅射 MoO3 薄膜的结构、电学和光学性能

摘要 通过在 4 × 10−2 Pa 的氧分压和 2 Pa 至 6 Pa 的不同溅射压力下溅射金属钼靶，通过射频磁控溅射技术在保持在 473 K 的玻璃和硅衬底上沉积 MoO3 薄膜。 Pa. 研究了溅射压力对 MoO3 薄膜的结构和表面形貌、电学和光学性能的影响。X 射线衍射研究表明，在 2 Pa 溅射压力下沉积的薄膜本质上是多晶的，具有 α 相和 β 相 MoO3 的混合相，而在 4 Pa 及以上溅射压力下形成的薄膜是 α 相 MoO3 . 扫描电子显微照片显示，随着溅射压力的增加，颗粒尺寸减小，形状由针状结构变为致密薄膜。傅里叶变换红外光谱研究证实了与 MoO3 相关的 Mo=O、Mo-O 和 Mo-O-Mo 的特征振动模式的存在。随着溅射压力从 2 Pa 增加到 6 Pa，MoO3 薄膜的电阻率分别从 6.0 × 104 Ω cm 降低到 2 × 104 Ω cm。随着溅射压力从2 Pa增加到6 Pa，薄膜的光学带隙分别从3.12 eV降低到2.86 eV。