The harmonic spur characteristics of a hybrid integrated S‐band power amplifier (PA), consisting of both stages of LDMOSFET and AlGaN/GaN HEMT, are studied at different temperatures. The PA offers a peak output power of 50 dBm (100 W) with power added efficiency higher than 50%, and adjacent channel power ratio performance is less than −30 dBc. A temperature test chamber is employed for measuring the harmonic spur of PA from 233 to 393 K, and its linear response to temperature is captured at high output power level.

中文翻译：

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混合集成LDMOS和AlGaN / GaN功率放大器在不同温度下的谐波杂散特性研究

研究了在不同温度下由LDMOSFET和AlGaN / GaN HEMT的两个阶段组成的混合集成S波段功率放大器（PA）的谐波杂散特性。该PA提供50 dBm（100 W）的峰值输出功率，功率附加效率高于50％，并且相邻信道功率比性能低于-30 dBc。使用温度测试室来测量PA在233至393 K之间的谐波杂散，并在高输出功率水平下捕获其对温度的线性响应。