The impact of high dose ⁶⁰Co gamma-ray irradiation on the oxide traps and interface traps of Au/HfO₂-SiO₂/Si MOS capacitors is studied by C–V and G–V analysis. The results show that the trapped charges in oxide induce a shift in the C–V curves. The density of the oxide traps increases with the irradiation dose, following a linear relation below 20 kGy(SiO₂) and a sublinear relation above that, and accordingly the effective trapping efficiency changes from 18.1% to 1.2%. The distribution of the interface trap density is affected by the irradiation dose. With the increase of the irradiation dose, the shallow energy level interface traps are more susceptible to be generated below 5 kGy(SiO₂), but the discrepancy is largely diminished at the high dose of 500 kGy(SiO₂). Fermi level pinning is observed at the high doses, and the Fermi level efficiency drops to 75.7% and 65.5% at 100 kGy(SiO₂) and 500 kGy(SiO₂), respectively.

高剂量的影响⁶⁰钴γ-射线照射在氧化陷阱和Au /的HfO的界面陷阱₂ -SiO ₂ / Si的MOS电容器由研究Ç - V和g ^ - V分析。结果表明，氧化物中捕获的电荷会引起C – V曲线的偏移。氧化物陷阱的密度随着辐射剂量的增加而增加，遵循低于20 kGy（SiO ₂）以及高于该值的亚线性关系，因此有效捕集效率从18.1％变为1.2％。界面陷阱密度的分布受照射剂量的影响。随着辐照剂量的增加，在5 kGy（SiO ₂）以下更容易产生浅能级的界面陷阱，但在500 kGy（SiO ₂）的高剂量下，这种差异会大大减小。在高剂量下观察到费米能级钉扎，并且在100kGy（SiO ₂）和500kGy（SiO ₂）下费米能级效率分别下降至75.7％和65.5％。