Abstract A Cu2ZnSnSe4 (CZTSe) photovoltaic absorber thin films were prepared using a 2-step selenization process on a Ti substrate including a Na precursor layer and a Na-free Ti substrate, and the effect of Na on the solar cell performance was compared. A CZTSe flexible solar cell fabricated on a Ti foil substrate exhibited an efficiency of 3.06%, which was less than half that of a solar cell fabricated on a soda lime glass substrate. This was attributed to the absence of Na and severe Zn crowding near the back contact. By depositing a 100‐nm-thick sodalime glass thin film on a Ti substrate to supply Na, the efficiency increased up to 5.59%. In the Na-doped CZTSe absorber layer grown on the Ti substrate, the back crowding of Zn was eliminated and the upper part of the absorption layer was converted to a Zn-rich environment, which prevented the formation of CuZn antisite defects.

中文翻译：

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通过固态硒化在 Ti 箔上制备柔性薄膜太阳能电池的 Cu2ZnSnSe4/Mo 界面上的 Na 扩散层的实现

摘要 在包括 Na 前驱体层和无 Na Ti 衬底的 Ti 衬底上使用两步硒化工艺制备了 Cu2ZnSnSe4 (CZTSe) 光伏吸收体薄膜，并比较了 Na 对太阳能电池性能的影响。在钛箔基板上制造的 CZTSe 柔性太阳能电池的效率为 3.06%，不到在钠钙玻璃基板上制造的太阳能电池的一半。这归因于在背面接触附近没有 Na 和严重的 Zn 拥挤。通过在 Ti 衬底上沉积 100 nm 厚的钠钙玻璃薄膜来提供 Na，效率提高了 5.59%。在 Ti 衬底上生长的 Na 掺杂 CZTSe 吸收层中，Zn 的背面拥挤被消除，吸收层的上部转变为富 Zn 环境，