To restrain dielectric loss while still simultaneously harvesting high dielectric constant (k) and thermal conductivity (TC) in polymer composites, β-silicon carbide whiskers (β-SiC_w) were encapsulated by a thin insulating oxidation layer (SiO₂) via calcination under air, and the obtained core-shell β-SiC_w@SiO₂ was incorporated into poly(vinylidene fluoride) (PVDF) composites. The k can be significantly enhanced in the PVDF composites with β-SiC_w@SiO₂, and the loss and conductivity are remarkably suppressed to very low levels even at high filler loadings. The improved dielectric performance can be attributed to the insulating SiO₂ shell preventing the β-SiC_w from direct contact and meanwhile impeding the long-range electron migration. Additionally, the β-SiC_w@SiO₂/PVDF exhibit higher TC and mechanical properties than the β-SiC_w/PVDF due to the suppressed thermal interfacial resistance and enhanced interfacial compatibility between the fillers and the matrix. Composites with high TC and k but low loss are promising materials for potential applications in microelectronic industry.

为了抑制介电损耗，同时仍然同时收获高介电常数（ķ）和聚合物复合材料的热导率（TC），β -硅碳化物晶须（β -SiC_瓦特）由薄的绝缘氧化层（SiO包封₂）通过煅烧下空气中，将得到的核-壳β -SiC _w @SiO ₂掺入聚偏二氟乙烯（PVDF）复合材料中。β -SiC _w @SiO ₂的PVDF复合材料中的k可以显着提高，即使在高填充量的情况下，损耗和电导率也被显着抑制到非常低的水平。介电性能的提高可归因于绝缘的SiO ₂壳层可防止β -SiC _w直接接触并同时阻碍长距离电子迁移。另外，由于抑制了热界面阻力和增强了填料与基体之间的界面相容性，β -SiC _w @SiO ₂ / PVDF比β -SiC _w / PVDF具有更高的TC和机械性能。高TC和k的复合材料 但是低损耗是微电子行业潜在应用的有前途的材料。