Abstract Materials with colossal dielectric permittivity (CP) are in the focus of interest for the development of miniaturization and integration of electronic components. Despite the extensive study of these new classes of co-doped TiO2 CP materials, the preparation of multilayer ceramics using this kind of CP materials is still challenging work. Here, we synthesize a series of (Sb5+, Nb5+) and (Sm3+, Y3+) co-doped Ti0.9Zr0.1O2 ceramics (SNSYTZO) through the conventional solid-state reaction method. XRD spectrum identifies that ceramics under x = 0.04 show a perfect rutile phase with the tetragonal crystal structure; however, minor brookite orthorhombic crystal structure appears when x > 0.04. FESEM images show the prepared ceramics have excellent densification and low porosity. Dielectric, modulus, and impedance spectrum are systematically explored the underlying CP mechanism and compared with each other to find the optimal materials composition to prepare further multilayer ceramics, which is fabricated by the industrial tape casting method. FESEM, together with surface element mapping, indicates that all doping elements are homogeneously distributed. Also, we investigate the dielectric response without/with DC bias. This work sheds light on a promising feasible route to prepare the miniaturization of the next-generation electronics via a large scale industrial tape casting method.

中文翻译：

---

双五价 (Sb5+, Nb5+) 和三价 (Sm3+, Y3+) 共掺杂 Ti0.9Zr0.1O2 大介电常数多层陶瓷，用于下一代电子产品的小型化

摘要 具有巨大介电常数 (CP) 的材料是电子元件小型化和集成化发展的焦点。尽管对这些新型共掺杂 TiO2 CP 材料进行了广泛的研究，但使用这种 CP 材料制备多层陶瓷仍然是一项具有挑战性的工作。在这里，我们通过常规的固相反应方法合成了一系列（Sb5+，Nb5+）和（Sm3+，Y3+）共掺杂的 Ti0.9Zr0.1O2 陶瓷（SNSYTZO）。XRD 谱表明，x = 0.04 下的陶瓷显示出具有四方晶体结构的完美金红石相；然而，当 x > 0.04 时，会出现次要的板钛矿正交晶体结构。FESEM 图像表明制备的陶瓷具有优异的致密性和低孔隙率。介电、模量、和阻抗谱系统地探索了潜在的 CP 机制，并相互比较，以找到最佳材料组成，以制备进一步的多层陶瓷，这是通过工业流延法制造的。FESEM 与表面元素映射一起表明所有掺杂元素均匀分布。此外，我们研究了没有/有直流偏置的介电响应。这项工作为通过大规模工业流延法制备下一代电子产品的小型化提供了一条有前途的可行途径。表明所有掺杂元素均匀分布。此外，我们研究了没有/有直流偏置的介电响应。这项工作为通过大规模工业流延法制备下一代电子产品的小型化提供了一条有前途的可行途径。表明所有掺杂元素均匀分布。此外，我们研究了没有/有直流偏置的介电响应。这项工作为通过大规模工业流延法制备下一代电子产品的小型化提供了一条有前途的可行途径。