Abstract The mechanical removal mechanism of SiC substrates in the water-lubricated environment is investigated by molecular dynamics (MD) simulation. The surface quality, subsurface damage, removal efficiency and structural phase transition of SiC substrates were analyzed in a fixed abrasive polishing (FAP) under various water film thickness and external load. In water-lubricated environment, a small number of water molecules are pressed on the interface between the SiC substrates and the diamond abrasive. The results show that the largest pressing depth decreases with the increase of the water film thickness, contrary to the effect of the external load. The phase transition and the frictional heat both decrease as the pressing depth decreases, which further reduces the stress and temperature of the substrate in the FAP. The water layer has positive impact on the surface roughness and subsurface damage depth. Furthermore, the removal efficiency in the water-lubricated nano-abrading is lower than that in the dry process. Our researches benefit to understand the mechanical removal mechanism of SiC substrates under a water-lubricated environment and give theoretical guide for improving the machining technology of FAP.

中文翻译：

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水润滑固定磨料抛光中SiC去除机理的分子动力学研究

摘要 通过分子动力学（MD）模拟研究了水润滑环境下SiC衬底的机械去除机理。在固定磨料抛光 (FAP) 中，在各种水膜厚度和外部载荷下分析了 SiC 衬底的表面质量、亚表面损伤、去除效率和结构相变。在水润滑环境中，少量水分子被压在 SiC 衬底和金刚石磨料之间的界面上。结果表明，最大压制深度随着水膜厚度的增加而减小，与外载荷的作用相反。相变和摩擦热都随着压制深度的减小而减小，这进一步降低了 FAP 中基板的应力和温度。水层对表面粗糙度和地下损伤深度有积极影响。此外，水润滑纳米研磨的去除效率低于干法。我们的研究有助于理解水润滑环境下 SiC 衬底的机械去除机制，为改进 FAP 加工技术提供理论指导。