Abstract Compared to ZnO-based photoconductive photodetectors (PDs), photovoltaic PDs possess the advantages of easy fabrication, low dark current, high response speed and possible self-driven ability. In this paper, an ultraviolet (UV) photovoltaic photodetector based on graphene/ZnO heterostructure was fabricated and investigated. A simple surface treatment was conducted by soaking the as-grown ZnO film in H2O2 solution at room temperature. After this processing, a transition from ohmic contact to Schottky contact was observed in graphene/ZnO interface, accompanied with a high-performance photovoltaic behavior for the graphene/H2O2-treated ZnO (denoted as G/H-ZnO) heterostructure. The self-powered Schottky photodetector of G/H-ZnO exhibits a responsivity of 50 μA/W and a short rise/decay time of 32 ms at zero bias. The fast response performance benefits from the rapid separation of photogenerated carriers, which can be attributed to the synergistic effect of pyroelectric potential and built-in electric field at graphene/ZnO interface. This study provides a facile approach for the development of ZnO-based self-powered photovoltaic devices.

中文翻译：

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基于石墨烯/ZnO异质结构的自供电紫外光伏光电探测器

摘要 与ZnO基光电探测器(PDs)相比，光伏PDs具有制造容易、暗电流低、响应速度快和可能的自驱动能力等优点。在本文中，制造和研究了一种基于石墨烯/ZnO 异质结构的紫外 (UV) 光伏光电探测器。通过在室温下将生长的 ZnO 膜浸泡在 H2O2 溶液中进行简单的表面处理。在此处理之后，在石墨烯/ZnO 界面中观察到从欧姆接触到肖特基接触的转变，伴随着石墨烯/H2O2 处理的 ZnO（表示为 G/H-ZnO）异质结构的高性能光伏行为。G/H-ZnO 的自供电肖特基光电探测器在零偏压下表现出 50 μA/W 的响应度和 32 ms 的短上升/衰减时间。快速响应性能得益于光生载流子的快速分离，这可归因于石墨烯/ZnO 界面处的热电势和内置电场的协同效应。该研究为开发基于 ZnO 的自供电光伏器件提供了一种简便的方法。