Abstract Matching graphene to semiconducting or insulating substrates is necessary for wide-ranging applications. Although synthesis of high-quality graphene on metal surfaces has gained great success, the transfer process of graphene is quite complicated and may cause defects and contamination. Therefore, the growth of graphene on insulating substrates is very important. Here, a direct synthesis method of single-layer graphene films on quartz substrate via a Cu-nanoparticle-assisted method was reported (N-CVD). The growth rate and quality of graphene on quartz showed a remarkable improvement compared with the conventional CVD process. Localized catalyzation made it possible for large-scale and continuous growth. Furthermore, the graphene glass fabricated by this method showed great performances on electrical, optical and thermal properties, and was proved to be hydrophobic. We designed a 2 cm × 2 cm single-layer graphene defogger, which can remove the fog completely within 10 s with a 30 V input voltage. Briefly, this work aims to present a low-cost, uniform and scalable method for graphene synthesis on insulating substrates.

中文翻译：

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通过纳米粒子辅助方法在石英衬底上直接合成单层石墨烯薄膜

摘要 石墨烯与半导体或绝缘基板的匹配对于广泛的应用是必要的。尽管在金属表面合成高质量石墨烯已取得巨大成功，但石墨烯的转移过程相当复杂，可能会导致缺陷和污染。因此，石墨烯在绝缘基板上的生长非常重要。在这里，报道了一种通过铜纳米粒子辅助方法在石英衬底上直接合成单层石墨烯薄膜的方法 (N-CVD)。与传统的 CVD 工艺相比，石英上石墨烯的生长速度和质量有了显着的提高。局部催化使大规模和持续增长成为可能。此外，通过这种方法制造的石墨烯玻璃在电学、光学和热学性能方面表现出良好的性能，并被证明是疏水的。我们设计了一个 2 cm × 2 cm 的单层石墨烯除雾器，它可以在 30 V 输入电压下在 10 秒内完全去除雾气。简而言之，这项工作旨在提出一种低成本、统一和可扩展的在绝缘基板上合成石墨烯的方法。