Abstract Hierarchical heterogeneous ZnO/Si nanowire arrays grown from metal-induced wet etching process on p-type silicon wafer were obtained and have been strategically sensitized by narrow bandgap semiconductors of In2S3 nanosheets and Ag2S quantum dots via successive ionic layer adsorption and reaction technique. The photodegradation of methylene blue as catalyzed by the arrays was conducted under visible light and ultraviolet light. By introducing the coating layers, the specimens were found to achieve absorptivity higher than 94% and yield a quarter of the resistance and 31-fold of the photo-current as compared to the primary nanowire arrays. The photodegradation efficiency was improved from 48.9% to 62.0%, and 43.0% to 55.0%, respectively in visible light and ultraviolet light with an enhanced recyclability. Band structure analysis indicated that the coating brought different Z-scheme heterojunctions for efficient photocatalytic performance, while the function could only work in a given spectral range. These results would be helpful to better realize the photocatalytic mechanisms and meanwhile, could be extended to design heterogeneous semiconductor nanomaterials for their potential applications.

中文翻译：

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Z 型异质结中 ZnO/Si 纳米线阵列的能带工程，用于有效的染料光降解

摘要 获得了通过金属诱导湿法蚀刻工艺在 p 型硅晶片上生长的分层异质 ZnO/Si 纳米线阵列，并通过连续离子层吸附和反应技术被 In2S3 纳米片和 Ag2S 量子点的窄带隙半导体战略敏化。由阵列催化的亚甲基蓝的光降解在可见光和紫外光下进行。通过引入涂层，发现样品的吸收率高于 94%，与初级纳米线阵列相比，产生了四分之一的电阻和 31 倍的光电流。在可见光和紫外光下，光降解效率分别从 48.9% 提高到 62.0% 和 43.0% 到 55.0%，并具有增强的可回收性。能带结构分析表明，涂层带来了不同的 Z 型异质结以实现高效的光催化性能，而该功能只能在给定的光谱范围内起作用。这些结果将有助于更好地实现光催化机制，同时可以扩展到设计异质半导体纳米材料的潜在应用。